发明名称 Integrated circuit including a first channel and a second channel
摘要 An integrated circuit is disclosed. In one embodiment, the integrated circuit includes a first area and a second area. The first area is stress engineered to provide enhanced mobility in a first channel that has a first width. The second area is stress engineered to provide enhanced mobility in a second channel that has a second width. The first channel and the second channel provide a combined current that is greater than a single current provided via a single channel having a single width that is substantially equal to the sum of the first width and the second width.
申请公布号 US8877576(B2) 申请公布日期 2014.11.04
申请号 US200711843883 申请日期 2007.08.23
申请人 Infineon Technologies AG 发明人 Knoblinger Gerhard;Kuttner Franz
分类号 H01L21/336;H01L29/78;H01L27/092;H01L21/8238 主分类号 H01L21/336
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A method comprising: enhancing mobility in a first channel that has a first width via stress engineering; enhancing mobility in a second channel that has a second width via stress engineering; and summing current from the first channel and the second channel to provide a summed current that is greater than a single current provided via a single channel that is stress engineered to enhance mobility and substantially the same as the first channel and the second channel, but having a single width equal to the sum of the first width and the second width, wherein: enhancing mobility in a first channel comprises enhancing mobility more in the first channel than mobility is enhanced in the single channel; and enhancing mobility in a second channel comprises enhancing mobility more in the second channel than mobility is enhanced in the single channel.
地址 Neubiberg DE