| 发明名称 |
METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH GATE PROFILE CONTROL |
| 摘要 |
A method for forming a semiconductor device includes forming a gate structure over a semiconductor substrate. The gate structure includes a gate electrode, at least two hard mask (HM) layers over the gate electrode, and a spacer abutting a side wall of the gate electrode and the at least two hard mask layers. The method further comprises forming a contact etch stop layer (CESL) over the gate structure, exposing at least one of the HM layers after forming the CESL, and removing the exposed at least one of the HM layers. |
| 申请公布号 |
US2014322872(A1) |
申请公布日期 |
2014.10.30 |
| 申请号 |
US201313873298 |
申请日期 |
2013.04.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
WANG Tzu-Chung;HSIEH Tzu-Yen |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a semiconductor device, comprising:
forming a gate structure over a semiconductor substrate, the gate structure comprising a gate electrode, at least two hard mask (HM) layers over the gate electrode, and a spacer abutting a side wall of the gate electrode and the at least two hard mask layers; forming a contact etch stop layer (CESL) over the gate structure; exposing at least one of the HM layers after forming the CESL; and removing the exposed at least one of the HM layers. |
| 地址 |
Hsin-Chu TW |
