| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent the occurrence of wafer deformation by reducing oxygen precipitation, i.e., the cause of the deformation even when rapid temperature increase/reduction heat treatment is performed to a silicon wafer, and also to prevent, at the same time, slip extension generated due to boat scratches and transfer scratches, i.e., the causes of wafer strength deterioration. <P>SOLUTION: The method for manufacturing the silicon wafer includes: a lifting step of raising silicon single crystal by a Czochralski method while regarding a silicon single-crystal straight-barrel portion as a region where a Void defect is present; a DZ processing step of eliminating a Void defect in a wafer surface layer as a device formation region by subjecting the sliced wafer to high-temperature annealing processing of≥1,100°C and≥30 min in a non-oxidizing atmosphere of H<SB>2</SB>and Ar; and a deposition/dissolution heat treatment step before the DZ processing step, which is carried out in a non-oxidizing gas atmosphere containing no nitrogen under conditions of a treatment temperature of 950 to 1,200°C, a holding time of 5 sec to 1 min, and a temperature reduction speed of 10 to 0.1°C/sec. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
