发明名称 Semiconductor memory device changing refresh interval depending on temperature
摘要 A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.
申请公布号 US8867293(B2) 申请公布日期 2014.10.21
申请号 US201313848514 申请日期 2013.03.21
申请人 Fujitsu Semiconductor Limited 发明人 Shirota Akinobu;Kawabata Kuninori
分类号 G11C7/00;G11C29/02;G11C11/406;G11C7/04;G11C29/50;G11C29/04;G11C11/401 主分类号 G11C7/00
代理机构 Arent Fox LLP 代理人 Arent Fox LLP
主权项 1. A semiconductor memory device which changes a refresh timing when refreshing a memory core having memory cells, comprising: a temperature detecting unit configured to supply a temperature-dependent signal that assumes a first state when temperature is higher than a threshold and that assumes a second state when the temperature is lower than the threshold; a refresh address generating circuit configured to generate a refresh address in response to a refresh request; and a control circuit configured to elongate the refresh timing upon a passage of a certain time following the supply of the temperature-dependent signal by the temperature detecting unit, wherein the control circuit includes: a counter circuit that starts counting at a point in time at which the temperature-dependent signal changes from the first state to the second state; and a refresh request generating circuit configured to generate the refresh request at a first certain interval before the supply of the temperature-dependent signal, to continue to generate the refresh request at the first certain interval during a period following the supply of the temperature-dependent signal before the counter circuit reaches a certain count value, and to generate the refresh request at a second certain interval different from the first certain interval after the counter circuit reaches the certain count value.
地址 Yokohama JP
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