发明名称 Solution-assisted carbon nanotube placement with graphene electrodes
摘要 A semiconductor device includes a substrate having at least one electrically insulating portion. A first graphene electrode is formed on a surface of the substrate such that the electrically insulating portion is interposed between a bulk portion of the substrate and the first graphene electrode. A second graphene electrode formed on the surface of the substrate. The electrically insulating portion of the substrate is interposed between the bulk portion of the substrate and the second graphene electrode. The second graphene electrode is disposed opposite the first graphene electrode to define an exposed substrate area therebetween.
申请公布号 US8859439(B1) 申请公布日期 2014.10.14
申请号 US201313852798 申请日期 2013.03.28
申请人 International Business Machines Corporation;Karlsruhe Institute of Technology;Taiwan Bluestone Technology Ltd. 发明人 Avouris Phaedon;Dimitrakopoulos Christos;Farmer Damon B.;Steiner Mathias B.;Engel Michael;Krupke Ralph;Lin Yu-Ming
分类号 H01L21/31;H01L29/06;H01L21/02;B82Y40/00 主分类号 H01L21/31
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP ;Alexanian Vazken
主权项 1. A method of forming carbon nanotubes on a substrate, the method comprising: forming a pair of graphene electrodes on a surface of the substrate, the pair of graphene electrodes separated from one another by an exposed portion of the substrate to define a first graphene electrode and a second graphene electrode opposite the first graphene electrode; depositing a solution containing at least one carbon nanotube on the surface of the substrate, the solution covering the first and second graphene electrodes; and generating an electric field across the first and second graphene electrodes, the electric field forcing the carbon nanotubes to the exposed portion of the substrate and aligning the at least one carbon nanotube between the first and second graphene electrodes in a direction parallel with the electric field.
地址 Armonk NY US