发明名称 |
IMAGING APPARATUS |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an imaging apparatus configured to have high stability against radiation irradiation such as an X-ray and suppress deterioration in electrical characteristics.SOLUTION: An imaging apparatus for obtaining an image using radiation such as an X-ray has pixel circuits arranged in matrix and overlapping a scintillator. The pixel circuit includes a switching transistor with extremely small off-state current and a light receiving element which are configured to overlap a shield layer formed of a metallic material and the like. This configuration provides the imaging apparatus having high stability against radiation irradiation such as an X-ray and suppressing deterioration in electrical characteristics.</p> |
申请公布号 |
JP2014194410(A) |
申请公布日期 |
2014.10.09 |
申请号 |
JP20140036115 |
申请日期 |
2014.02.27 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;AKIMOTO KENGO;TAKAHASHI HIRONOBU;KANEMURA HIROSHI;MIYANAGA SHOJI |
分类号 |
G01T1/20;H01L21/336;H01L27/14;H01L27/144;H01L27/146;H01L29/786;H04N5/321;H04N5/367 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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