| 摘要 |
PURPOSE: A group III nitride-based semiconductor light emitting diode having a flip chip structure is provided to perform a low driving voltage, a low leakage current, and a high external light emitting efficiency property. CONSTITUTION: A group III nitride-based semiconductor light emitting diode having a flip chip structure includes a growing substrate(10), a light emitting structure for an LED device, a super lattice structure(90), a first ohmic contact current spreading layer(100), a second ohmic contact current spreading layer, a third ohmic contact current spreading layer, a p-type schottky contact electrode pad, and an n-type ohmic contact electrode pad. The light emitting structure comprises a bottom nitride-based clad layer(20), a nitride-based active layer(30), and a top nitride-based clad layer(40). The super lattice structure is formed on a partial region or a whole region of a top surface of the top nitride-based clad layer of the light emitting structure for the LED device. |
