Semiconductor device, memory system including the same, and method of manufacturing the same

摘要

The semiconductor device includes a vertical channel layer formed on a substrate; conductive layer patterns and insulating layer patterns alternately formed around a length of each of the vertical channel layer; and a charge storing layer pattern formed between each of the vertical channel layers and the conductive layer patterns, where each of the charge storing layer patterns is isolated by the insulating layer patterns.

主权项

1. A semiconductor device comprising:
vertical channel layers formed on a substrate; insulating layer patterns surrounding the vertical channel layers and isolated from each other; conductive layer patterns formed between the insulating layer patterns; and charge storing layer patterns isolated from each other, wherein the charge storing layer patterns are interposed only between the vertical channel layers and the conductive layer patterns so that the conductive layer patterns come in contact with the insulating layer patterns.