| 发明名称 | Method for mask patterns | ||
| 摘要 | A design method for mask patterns is provided. The design method includes providing an exposure machine with a mask including an optical proximity correction (OPC) pattern including a first clear area and a first dark area, wherein the first clear area surrounds the first dark area, placing a substrate in the exposure machine, and exposing the substrate to light to form an imaged pattern on the substrate, wherein the imaged pattern has an area smaller than that of the optical proximity correction (OPC) pattern. | ||
| 申请公布号 | US8846275(B2) | 申请公布日期 | 2014.09.30 |
| 申请号 | US201213610367 | 申请日期 | 2012.09.11 |
| 申请人 | Innolux Corporation | 发明人 | Wang Po-Chiao;Huang Cheng-Pang;Ho Yu-Chang |
| 分类号 | G03F1/44;G03F1/36 | 主分类号 | G03F1/44 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A design method for mask patterns, comprising: providing an exposure machine with a mask comprising an optical proximity correction (OPC) pattern comprising a first clear area and a first dark area, wherein the first clear area surrounds the first dark area, the first clear area is a continuous clear area and the first dark area is a continuous dark area; placing a substrate in the exposure machine; and exposing the substrate to light to form an imaged pattern on the substrate, wherein the imaged pattern has an area smaller than that of the optical proximity correction (OPC) pattern. | ||
| 地址 | TW | ||