| 发明名称 |
RESISTANCE RANDOM ACCESS MEMORY DEVICE |
| 摘要 |
A resistance random access memory device according to an embodiment includes a first electrode, a second electrode and a variable resistance film provided between the first electrode and the second electrode. The second electrode includes material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum, aluminum, and bismuth, alloys thereof, and silicides thereof. The variable resistance film includes silicon oxynitride. The variable resistance film includes a first resistance change layer having a first nitrogen concentration and a second resistance change layer having a second nitrogen concentration lower than the first nitrogen concentration. |
| 申请公布号 |
US2014284541(A1) |
申请公布日期 |
2014.09.25 |
| 申请号 |
US201314020345 |
申请日期 |
2013.09.06 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKAISHI Riichiro;Miyagawa Hidenori;Fujii Shosuke |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistance random access memory device, comprising:
a first electrode; a second electrode comprising material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum, aluminum, and bismuth, alloys thereof, and silicides thereof; and a variable resistance film provided between the first electrode and the second electrode, the variable resistance film comprising silicon oxynitride, the variable resistance film comprising:
a first resistance change layer having a first nitrogen concentration; anda second resistance change layer having a second nitrogen concentration lower than the first nitrogen concentration. |
| 地址 |
Minato-ku JP |
