| 发明名称 | Retrograde substrate for deep trench capacitors | ||
| 摘要 | A semiconductor device includes a substrate having a first doped portion to a first depth and a second doped portion below the first depth. A deep trench capacitor is formed in the substrate and extends below the first depth. The deep trench capacitor has a buried plate that includes a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion. | ||
| 申请公布号 | US8841716(B2) | 申请公布日期 | 2014.09.23 |
| 申请号 | US201313936679 | 申请日期 | 2013.07.08 |
| 申请人 | International Business Machines Corporation | 发明人 | Basker Veeraraghavan S.;Haensch Wilfried E.;Leobandung Effendi;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 | H01L21/00;H01L27/108;H01L31/112;H01L27/12;H01L49/02;H01L27/02;H01L29/94;H01L29/66;H01L21/84;H01L27/06 | 主分类号 | H01L21/00 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A semiconductor device, comprising: a substrate having a buried insulator layer and a first doped portion to a first depth and a second doped portion below the first depth; a deep trench capacitor formed in the substrate and extending below the first depth, the deep trench capacitor having a buried plate, the buried plate including a dopant type forming an electrically conductive connection with second doped portion of the substrate and being electrically insulated from the first doped portion; and a well formed in the first doped portion under the buried insulator layer and above the first depth, wherein the well is not in contact with the deep trench capacitor and wherein the well comprises at least one device formed in the well. | ||
| 地址 | Armonk NY US | ||