Silane and borane treatments for titanium carbide films

摘要

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.

主权项

1. A process for treating a film comprising titanium carbide, the process comprising
depositing a film comprising titanium carbide by an atomic layer deposition process comprising a plurality of deposition cycles, at least one cycle comprising:
contacting a substrate in a reaction space with alternating and sequential pulses of a first source chemical that comprises a titanium halide and a second source chemical that comprises a metal and an organic ligand; and exposing the titanium carbide film to a silane/borane agent, wherein after exposing the titanium carbide film comprises less than about 20% titanium on an atomic basis.