SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises: a semiconductor substrate; a lower conductive pattern located on the semiconductor substrate; an interlayer insulating film which is located on the lower conductive pattern and has a through-hole partially exposing the lower conductive pattern; an upper conductive pattern located within the through-hole and electrically connected with the lower conductive pattern; side surface spacers located on a side surface of the upper conductive pattern; and an air gap located between the through-hole and the side surface spacers, and between the lower conductive pattern and the side surface spacers.