PARTIALLY ISOLATED FIN-SHAPED FIELD EFFECT TRANSISTORS

摘要

A transistor device and a method for forming a fin-shaped field effect transistor (FinFET) device, with the channel portion of the fins on buried silicon oxide, while the source and drain portions of the fins on silicon. An example method includes receiving a wafer with a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer. The BOX layer is in physical contact with the silicon layer and the silicon substrate. The method further comprises implanting a well in the silicon substrate and forming vertical sources and drains over the well between dummy gates. The vertical sources and drains extend through the BOX layer, fins, and a portion of the dummy gates.

主权项

1. A method for forming a fin-shaped field effect transistor (FinFET) device, with the channel portion of the fins on buried silicon oxide, with source and drain portions of fins on silicon, the method comprising:
receiving a wafer, the wafer including a silicon layer electrically isolated from a silicon substrate by a buried oxide (BOX) layer, the BOX layer being in physical contact with the silicon layer and the silicon substrate; implanting a well in the silicon substrate; and forming vertical sources and drains over the well between dummy gates, the vertical sources and drains extending through the BOX layer, fins, and a portion of the dummy gates.