Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array

摘要

Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a low band gap dielectric layer disposed between two higher band gap dielectric layers. The high band gap dielectric layers can be doped with doping materials to form traps at energy levels higher than the operating voltage of the memory device.

主权项

1. A selector device for a memory device, the selector device comprising
a first layer,
wherein the first layer is operable as a first electrode,wherein the first layer comprises a first Fermi level; a second layer disposed above the first layer,
wherein the second layer comprises a dielectric or semiconductor layer,wherein the second layer comprises a material having a first band gap, wherein the first band gap has a first conduction band minimum,wherein the second layer is doped with a first doping material to form traps at energy levels between the first conduction band minimum and a first energy trap level,wherein the first energy trap level is between 0.3 and 0.7 eV higher than the first Fermi level; a third layer disposed above the second layer,
wherein the third layer comprises a dielectric layer,wherein the third layer comprises a material different from that of the second layer,wherein the third layer comprises a material having a second band gap, wherein the second band gap is smaller than the first band gap; a fourth layer disposed above the third layer,
wherein the fourth layer comprises a dielectric layer,wherein the fourth layer comprises a material having a third band gap, wherein the third band gap has a third conduction band minimum,wherein the fourth layer is doped with a second doping material to form traps at energy levels between the third conduction band minimum and a second energy trap level; a fifth layer disposed above the fourth layer,
wherein the fifth layer is operable as a second electrode.