| 发明名称 |
Hybrid Focus-Exposure Matrix |
| 摘要 |
A method for controlling semiconductor production through use of a hybrid Focus Exposure Matrix (FEM) model includes taking measurements of a set of structures formed onto a substrate. The method further includes using a FEM model to determine focus and exposure conditions used to form the structure The model was created through use of measurements of structures formed on a substrate under varying focus and exposure conditions, the measurements being taken using both an optical measurement tool and a scanning electron microscope. |
| 申请公布号 |
US2014257761(A1) |
申请公布日期 |
2014.09.11 |
| 申请号 |
US201313902622 |
申请日期 |
2013.05.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Zhou Wen-Zhan;Lee Heng-Jen;Chen Yen-Liang;Chen Kai-Hsiung;Ke Chih-Ming;Hwang Ho-Yung David |
| 分类号 |
H01L21/66;G06F17/50 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for controlling semiconductor production through use of a hybrid Focus Exposure Matrix (FEM) model, the method comprising:
forming a set of structures on a substrate; taking measurements of the set of structures; and using a FEM model to determine focus and exposure conditions used to form the structure; wherein the model was created through use of measurements of structures formed on a substrate under a plurality of different focus and exposure conditions, the measurements being taken using both an optical measurement tool and a scanning electron microscope. |
| 地址 |
Hsin-Chu TW |
