| 摘要 |
<p>The present invention provides a magnetic memory element having a memory cell of size 4F 2 which realizes crosspoint-type memory. In a magnetic memory element 100, a first magnetic layer 22, a third magnetic layer (spin polarization enhancement layer) 27, an intermediate layer 21, a fourth magnetic layer (spin polarization enhancement layer) 26, and a second magnetic layer 20 are stacked in order. The intermediate layer 21 is made of an insulating material or a nonmagnetic material. The second magnetic layer 20 comprises a ternary alloy of gadolinium, iron and cobalt, a binary alloy of gadolinium and cobalt, or a binary alloy of terbium and cobalt. Alternatively, the first magnetic layer 22 comprises a ternary alloy of terbium, iron and cobalt, or a binary alloy of terbium and cobalt.</p> |
