Light emitting element and a production method therefor

摘要

A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.

主权项

1. A light emitting device comprising:
a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer disposed over the second conductive semiconductor layer, and a first conductive semiconductor layer disposed over the active layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and
a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer, wherein a portion of the first passivation layer is disposed between the reflective layer and the light emitting semiconductor layer,wherein the reflective layer directly contacts the ohmic contact layer and the portion of the first passivation layer.