| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensor capable of improving light utilization efficiency, and a method of manufacturing the same.SOLUTION: The solid-state image sensor according to an embodiment includes: a plurality of photoelectric conversion parts provided on a substrate; color filters on the plurality of photoelectric conversion parts, each of which is provided for each of the plurality of photoelectric conversion parts; an insulating layer provided so as to surround the plurality of color filters; an antireflection layer provided between the plurality of photoelectric conversion parts and both the plurality of color filters and the insulating layer; and a protective layer provided between the insulating layer and the antireflection layer. The protective layer is formed of a material having an etching rate lower than that of silicon oxide. |
