发明名称 HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES
摘要 <p>A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.</p>
申请公布号 WO2014127136(A1) 申请公布日期 2014.08.21
申请号 WO2014US16275 申请日期 2014.02.13
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;POURHASHEMI, ARASH;FARRELL, ROBERT M.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI 发明人 POURHASHEMI, ARASH;FARRELL, ROBERT M.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI
分类号 H01L33/04;H01L33/12;H01L33/30 主分类号 H01L33/04
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