HIGH POWER BLUE-VIOLET III-NITRIDE SEMIPOLAR LASER DIODES
摘要
<p>A high power blue-violet Ill-nitride semipolar laser diode (LD) with an output power in excess of 1 W, a slope efficiency of more than 1 W/A, and an external quantum efficiency (EQE) in excess of 25% and more preferably, in excess of 35%. These operating characteristics make these laser diodes suitable for use in solid state lighting systems.</p>
申请公布号
WO2014127136(A1)
申请公布日期
2014.08.21
申请号
WO2014US16275
申请日期
2014.02.13
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;POURHASHEMI, ARASH;FARRELL, ROBERT M.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI
发明人
POURHASHEMI, ARASH;FARRELL, ROBERT M.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI