发明名称 |
Semiconductor Device and Method of Forming Insulating Layer in Notches Around Conductive TSV for Stress Relief |
摘要 |
A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A notch is formed in the semiconductor wafer around each of the conductive vias. The notch around the conductive vias can be formed by wet etching, dry etching, or LDA. A first insulating layer is formed over a surface of the semiconductor wafer and conductive vias and into the notch to provide stress relief between the conductive vias and semiconductor wafer. A portion of the first insulating layer is removed to expose the conductive vias. A first conductive layer and second insulating layer can be formed around the conductive vias. A second conductive layer can be formed over the conductive vias. The notch can extend into the second insulating layer. |
申请公布号 |
US2014225279(A1) |
申请公布日期 |
2014.08.14 |
申请号 |
US201414257850 |
申请日期 |
2014.04.21 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Choi Won Kyoung;Yong Chang Bum;Ku Jae Hun |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a conductive via through the semiconductor die; removing a portion of the semiconductor die adjacent to the conductive via; and forming a first insulating layer over a surface of the semiconductor die and adjacent to the conductive via. |
地址 |
Singapore SG |