METHODS OF TRIMMING NANOWIRE STRUCTURES

摘要

One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an N-type doped region in the initial nanowire structure and performing an etching process to remove at least a portion of the doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein the final cross-sectional size is smaller than the initial cross-sectional size.

主权项

1. A method of forming a device, comprising:
forming an initial nanowire structure having an initial cross-sectional size; performing a doping diffusion process to form an N-type doped region in said initial nanowire structure; and performing an etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is smaller than said initial cross-sectional size.