发明名称 CHARGED PARTICLE BEAM DRAWING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a charged particle beam drawing method suppressing aggravation of CD precision and positional accuracy.SOLUTION: An electron beam drawing apparatus 101 for drawing by irradiating an electron beam B forming a charged particle beam to a sample 102 has a first blanking deflector 305, a second blanking deflector 335, and a blanking aperture 306 from the electron gun 303 side to the downstream side thereof. The particle beam drawing method using the electron beam drawing apparatus 101 has an irradiation process of irradiating the electron beam B to the sample 102, a first blanking process of moving the electron beam B in a first direction from the position of the electron beam B in the irradiation process by the first blanking deflector 305, and a second blanking process of moving the electron beam B in a second direction opposite to the first direction from the position of the electron beam B in the irradiation process by the second banking deflector 335.</p>
申请公布号 JP2014138050(A) 申请公布日期 2014.07.28
申请号 JP20130005138 申请日期 2013.01.16
申请人 NUFLARE TECHNOLOGY INC 发明人 ONISHI TAKAYUKI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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