发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer.
申请公布号 US2014203313(A1) 申请公布日期 2014.07.24
申请号 US201313847643 申请日期 2013.03.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TOMIZAWA Hideyuki;KOJIMA Akihiro;SHIMADA Miyoko;AKIMOTO Yosuke;SUGIZAKI Yoshiaki;FURUYAMA Hideto
分类号 H01L33/50 主分类号 H01L33/50
代理机构 代理人
主权项 1. A semiconductor light emitting device comprising: a mounting substrate having a mounting surface provided with a plurality of interconnections; a semiconductor light emitting element disposed on the mounting surface and including: a semiconductor layer including a light emitting layer;a p-side electrode connected to the semiconductor layer;a p-side interconnection unit connecting the p-side electrode and one of the plurality of interconnections;an n-side electrode connected to the semiconductor layer; andan n-side interconnection unit connecting the n-side electrode and another of the plurality of interconnections; a first resin covering a periphery of the semiconductor light emitting element on the mounting surface and containing a phosphorescent substance capable of being excited by emission light of the light emitting layer; and a second resin provided on the first resin layer and the semiconductor light emitting element and containing a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer.
地址 Tokyo JP