| 摘要 |
<p>The method involves producing number of certain electrode contact surfaces (50, 50') and conductive strips (30, 30') on lower silicon layers for respective electrode-modules (10, 20) or layers. Upper silicon layers are attached on the lower silicon layers. Holes are produced in the latter module, where one lower layer and one upper layer of the latter module pass through the holes. The holes are arranged such that the holes correspond to the former surface of the latter module during attaching of the latter module on the former module. An independent claim is also included for an electrode structure for utilization in a neural structure.</p> |
