Methods for fabricating a cell string and a non-volatile memory device including the cell string

摘要

A method for fabricating a cell string includes forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, filling the opening with a metal, and annealing the semiconductor pattern having the opening filled with the metal.

主权项

1. A method for fabricating a cell string, the method comprising:
forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate; forming an opening by patterning the interlayer dielectric layer and the sacrificial layer; filling the opening with a metal, such that the metal contacts the sacrificial layer to form an interface between the metal and the sacrificial layer; and annealing the semiconductor pattern having the opening filled with the metal.