主权项 |
1. A method of forming a transistor, comprising:
forming a gate structure on a semiconductor substrate, the gate structure including a gate dielectric layer on the semiconductor substrate and a gate on the gate dielectric layer; forming a first sidewall on each sidewall of the gate structure, wherein the first sidewall is made of a doped material; forming a second sidewall on the first sidewall, wherein the second sidewall is formed of a material having an etch rate greater than the first sidewall; forming a source and a drain in the semiconductor substrate on both sides of the gate structure; forming a metal silicide layer on the semiconductor substrate associated with each of the source and the drain, such that the second sidewall on the semiconductor substrate is between the metal silicide layer and the first silicide layer; after forming the metal silicide layer, removing the second sidewall to expose a surface portion of the semiconductor substrate between the metal silicide layer and the first silicide layer; and forming a stress layer on the surface portion of the semiconductor substrate exposed between the metal silicide layer and the first silicide layer, on the metal silicide layer, on the first sidewall, and on the gate. |