PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICE AND AN INTEGRATED CIRCUIT DEVICE THEREOF

摘要

A method for manufacturing a semiconductor integrated circuit device comprises the steps of: (a) providing a material layer on a substrate; (b) forming a first resist lower film made of an organic material on the material layer; (c) forming a second resist lower film by spin-on-coating a composition for a silicon-based resist lower film on the first resist lower film; (d) forming a capping layer on the second resist lower film; (e) forming a radiation-sensitive imaging layer on the capping layer; (f) generating a radiation-exposed region pattern in the radiation-sensitive imaging layer by exposing the radiation-sensitive imaging layer to radiation according to a patterning method; (g) exposing a portion of the first resist lower film by selectively removing the radiation-sensitive imaging layer and a portion of the second resist lower film; (h) exposing a portion of the material layer by selectively removing the patterned second resist lower film and a portion of the first resist lower film; (i) forming a patterned material shape by etching an exposed portion of the material layer using the first resist lower film as a mask; and (j) removing the remaining radiation-sensitive imaging layer.