发明名称 Method for producing ferroelectric thin film
摘要 <p>A method for producing a ferroelectric thin film (14) comprises: coating a composition for forming a ferroelectric thin film on a substrate having a substrate body (10) and a base electrode (11) that has crystal faces oriented in the (111) direction, wherein the method includes formation of an orientation controlling layer (13) by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane. </p>
申请公布号 EP2525391(A3) 申请公布日期 2014.07.02
申请号 EP20120168002 申请日期 2012.05.15
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 WATANABE, TOSHIAKI;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI;DOI, TOSHIHIRO
分类号 H01L21/02;H01L21/28;H01L21/316;H01L41/08;H01L41/319;H01L49/02 主分类号 H01L21/02
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