| 发明名称 | Epitaxial growth of single crystalline MgO on germanium | ||
| 摘要 | The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure. | ||
| 申请公布号 | US8766341(B2) | 申请公布日期 | 2014.07.01 |
| 申请号 | US201012905675 | 申请日期 | 2010.10.15 |
| 申请人 | The Regents of the University of California | 发明人 | Han Wei;Zhou Yi;Wang Kang-Lung;Kawakami Roland K. |
| 分类号 | H01L21/02;H01L29/10;H01L29/12;H01L21/00 | 主分类号 | H01L21/02 |
| 代理机构 | Withrow & Terranova, P.L.L.C. | 代理人 | Withrow & Terranova, P.L.L.C. |
| 主权项 | 1. A method for creating a heterostructure comprising: providing a substrate having a first layer, wherein the first layer includes a substantially single crystalline germanium (Ge); placing the substrate into a molecular beam epitaxy chamber; annealing the substrate; and depositing a second layer onto the substrate by evaporation of a single crystal magnesium-oxide (MgO) source to form the second layer on the substrate, wherein the second layer includes a substantially single crystalline magnesium-oxide, and wherein the substantially single crystalline magnesium-oxide of the second layer (001) oriented and a unit cell of the subatantially single crystalline magnesium-oxide has a 45° in-plane rotation with respect to a unit cell of germanium(001) in the substrate. | ||
| 地址 | Oakland CA US | ||