| 摘要 |
PROBLEM TO BE SOLVED: To impart high withstand voltage to a diode and to reduce current leaking to a substrate.SOLUTION: A potential separation element VIU is provided separately from a diode FID. An n-type low-concentration region LNIR is formed on a P-type layer PIR1. A first high-concentration N-type region HNIR1 is positioned in the n-type low-concentration region LNIR and is connected to a cathode electrode CE of the diode FID. A second high-concentration N-type region HNIR2 is positioned in the n-type low-concentration region LNIR, is arranged apart from the first high-concentration N-type region HNIR1, and is connected to power supply wiring VB of a first circuit HVR. A first P-type region PIR2 is formed in the n-type low-concentration region LNIR, and the bottom of the first P-type region PIR2 is connected to the P-type layer PIR1. A ground potential is applied to the first P-type region PIR2, and the first P-type region PIR2 is positioned adjacent to the first high-concentration N-type region HNIR1. |
