发明名称 |
METAL OXIDE TFT WITH IMPROVED TEMPERATURE STABILITY |
摘要 |
A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level. |
申请公布号 |
WO2014099590(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
WO2013US74607 |
申请日期 |
2013.12.12 |
申请人 |
CBRITE INC. |
发明人 |
SHIEH, CHAN-LONG;FOONG, FATT;MUSOLF, JUERGEN;YU, GANG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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