METHOD OF FORMING AN ISOLATION LAYER IN SEMICONDUCTOR DEVICE

摘要

A method for forming a device isolation layer in a semiconductor device is provided to improve leakage current by removing a surface chemical part like Si-OR, Si-OH, and H2O. A trench(114) is formed in an element isolation region of a semiconductor substrate(100). A SiO2 aerogel layer(120) is formed so that the trench is filled. An O2 plasma process is performed to remove a surface chemical part of the SiO2 aerogel. The SiO2 aerogel layer is formed by drying a solvent after forming SiO2 sol and changing the sol into the gel.