| 发明名称 |
TOPOLOGICAL INSULATOR STRUCTURE |
| 摘要 |
A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL. |
| 申请公布号 |
US2014178674(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201314055863 |
申请日期 |
2013.10.16 |
| 申请人 |
Institute of Physics, Chinese Academy of Sciences ;Tsinghua University |
发明人 |
XUE QI-KUN;HE KE;MA XU-CUN;CHEN XI;WANG LI-LI;CHANG CUI-ZU;FENG XIAO;LI YAO-YI;JIA JIN-FENG |
| 分类号 |
H01B17/00 |
主分类号 |
H01B17/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A topological insulator structure, comprising:
an insulating substrate; and a magnetically doped TI quantum well film located on the insulating substrate; wherein a material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1; and the magnetically doped TI quantum well film is in a range of 3 QL thickness to 5 QL thickness. |
| 地址 |
Beijing CN |
