| 发明名称 | Phase-change memory cell | ||
| 摘要 | A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical. | ||
| 申请公布号 | US8759808(B2) | 申请公布日期 | 2014.06.24 |
| 申请号 | US201314018254 | 申请日期 | 2013.09.04 |
| 申请人 | STMicroelectronics (Crolles 2) SAS;Commissariat à l'Énergie Atomique et aux Énergies Alternatives | 发明人 | Nodin Jean-Francois;Sousa Veronique;Lhostis Sandrine |
| 分类号 | H01L45/00 | 主分类号 | H01L45/00 |
| 代理机构 | Wolf, Greenfield & Sacks, P.C. | 代理人 | Wolf, Greenfield & Sacks, P.C. |
| 主权项 | 1. A memory cell comprising a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via comprises a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical. | ||
| 地址 | Crolles FR | ||