SEMICONDUCTOR DEVICE HAVING METALLIC RESISTOR STRUCTURE

摘要

Disclosed is a semiconductor device comprising an activation area and a field area on a substrate; a gate structure on the activation area and a resistance structure on the field area; a first interlayer insulation layer for covering the gate structure and the resistance structure; a resistance trench plug for coming in contact with the resistance structure by vertically passing through the first interlayer insulation layer; a second interlayer insulation layer on the first interlayer insulation layer and the resistance trench plug; and a resistance contact plug for vertically passing through the first and second interlayer insulation layers to come in contact with the resistance structure.