发明名称 SEMICONDUCTOR PACKAGE HAVING SUPPORTING PLATE AND METHOD OF FORMING THE SAME
摘要 A semiconductor package may include a packaging substrate, a first semiconductor chip on the packaging substrate, and a support plate on the packaging substrate. The support plate may be spaced apart from the first semiconductor chip in a direction parallel with respect to a surface of the packaging substrate. A second semiconductor chip may be provided on the first semiconductor chip and on the support plate so that the first semiconductor chip is between the second semiconductor chip and the packaging substrate and so that the support plate is between the second semiconductor chip and the packaging substrate. An adhesion layer may bond the second semiconductor chip to the first semiconductor chip and may bond the second semiconductor chip to the support plate. In addition, an electrical coupling may be provided between the first semiconductor chip and the packaging substrate.
申请公布号 US2014167291(A1) 申请公布日期 2014.06.19
申请号 US201414184951 申请日期 2014.02.20
申请人 Nam Tae-Duk;Kim Jin-Ho;Kim Hyuk-Su;Kim Hyoung-Suk;Lee Tae-Young 发明人 Nam Tae-Duk;Kim Jin-Ho;Kim Hyuk-Su;Kim Hyoung-Suk;Lee Tae-Young
分类号 H01L25/065 主分类号 H01L25/065
代理机构 代理人
主权项 1. A semiconductor package, comprising: a substrate; a first semiconductor chip on the substrate; a support plate on the substrate; a first electrically conductive connection between the first semiconductor chip and the support plate, wherein the first electrically conductive connection is configured to provide electrical connection between the first semiconductor chip and the substrate; and a chip stack on the support plate and on the first semiconductor chip, wherein the chip stack includes a plurality of second semiconductor chips, a first adhesion layer, and a second adhesion layer, wherein the first adhesion layer is between a first of the plurality of second semiconductor chips and the support plate and between the first of the plurality of second semiconductor chips and the first semiconductor chip, wherein the second adhesion layer is between the first of the plurality of second semiconductor chips and a second of the plurality of second semiconductor chips, wherein the first adhesion layer is thicker than the second adhesion layer, and wherein the first electrically conductive connection penetrates a portion of the first adhesion layer between the first semiconductor chip and the first of the plurality of second semiconductor chips.
地址 Seoul KR