| 发明名称 | Light-emitting diode, light-emitting diode lamp and lighting device | ||
| 摘要 | A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0≦X1≦1) and barrier layers having the composition: (AlX2Ga1-X2)As (0≦X2≦1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0≦X3≦1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0≦X4≦1, 0<Y≦1); and a light-emitting diode lamp and a lighting device using the same. | ||
| 申请公布号 | US8754398(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US201113574894 | 申请日期 | 2011.01.20 |
| 申请人 | Showa Denko K.K. | 发明人 | Aihara Noriyuki;Seo Noriyoshi;Muraki Noritaka |
| 分类号 | H01L29/06;H01L31/072;H01L31/109;H01L31/0328;H01L31/0336 | 主分类号 | H01L29/06 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A light-emitting diode, comprising: a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As and barrier layers having the composition: (AlX2Ga1-X2)As (0<X2≦1) are alternately laminated, a first guide layer and a second guide layer which are paired to sandwich the active layer and have the composition: (AlX3Ga1-X3)As (0≦X3≦1), and a first cladding layer and a second cladding layer which are paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0<X4<1, 0<Y≦1), and an emission peak wavelength is 900 nm or more and 985 nm or less. | ||
| 地址 | Tokyo JP | ||