| 发明名称 |
Methods of forming semiconductor devices by singulating a substrate by removing a dummy fill material |
| 摘要 |
In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed. |
| 申请公布号 |
US8748297(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201213452484 |
申请日期 |
2012.04.20 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Stranzl Gudrun;Zgaga Martin;Kahn Markus;Denifl Guenter |
| 分类号 |
H01L21/00;H01L21/82;H01L21/8258 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming openings in a substrate; forming a dummy fill material within the openings; overfilling the openings
with the dummy fill material over the substratewhen forming the dummy fill material within the openings; attaching the substrate to a carrier; thinning the substrate to expose the dummy fill material in the openings; singulating the substrate by removing the dummy fill material in the openings; placing the substrate over a tape after removing the dummy fill material; removing the carrier after placing the substrate over the tape; and removing the overfilled dummy fill material after removing the carrier.
|
| 地址 |
Neubiberg DE |
