| 摘要 |
<p>The present invention relates to a field effect transistor using phosphorus-doped graphene, a method of preparing the same, phosphorus-doped graphene, and a method of preparing the same. The field effect transistor according to one embodiment of the present invention includes a source electrode and a drain electrode which are formed on a substrate, respectively; and a channel layer including phosphorous-doped graphene. According to one embodiment of the present invention, the channel layer is electrically connected to the source electrode and the drain electrode.</p> |
