| 发明名称 |
Semiconductor device and method of forming the same |
| 摘要 |
A semiconductor device includes a semiconductor substrate having a groove and an active region adjacent to the groove; a buried gate electrode in the groove; and a capacitor contact including a first portion and a second portion over the first portion. The first portion is greater in horizontal dimension than the second portion. The first portion has a bottom surface that is in contact with an upper surface of the active region. |
| 申请公布号 |
US8742494(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213415432 |
申请日期 |
2012.03.08 |
| 申请人 |
|
发明人 |
Wu Nan |
| 分类号 |
H01L29/15;H01L31/0256;H01L27/108;H01L29/66;H01L21/3205;H01L21/44 |
主分类号 |
H01L29/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a groove and an active region adjacent to the groove; a gate electrode in the groove; and a capacitor contact including a first portion and a second portion over the first portion, the second portion having a second central axis which is horizontally shifted from a first central axis of the first portion, the first portion and the second portion being made of an identically same conductive film so that the capacitor contact is free from an interface between the first and second portions the first portion having a bottom surface that is in contact with an upper surface of the active region.
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| 地址 |
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