| 摘要 |
Within the scope of a Silicon-wafer making, in which a silicon monocrystal seed is arranged in the bottom region of a crucible, wherein the silicon monocrystal seed has a seed surface with a {110}-crystal orientation perpendicular to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed, and in which the silicon block is split into Silicon-wafers in such a manner that a wafer surface has a {100}-crystal orientation, wherein the silicon monocrystal seed is manufactured from a silicon monocrystal block, the block axis of which has a [110]-spatial orientation, wherein the silicon monocrystal block is cut-off for forming the seed surface of the silicon monocrystal seed with the {110}-crystal orientation parallel to the block axis. |
