发明名称 ETCHANT COMPOSITION FOR AG THIN LAYER AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME
摘要 The present invention relates to an etchant composition of multiple layers composed of a single layer of Ag or Ag alloy or the single layer and an indium oxide layer. The etchant composition contains nitric acid of 2-4.0 wt%, sulfuric acid of 4.0-6.0 wt%, ferric salt of 0.1-2.0 wt%, and residual water.
申请公布号 KR20140063284(A) 申请公布日期 2014.05.27
申请号 KR20120130463 申请日期 2012.11.16
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 JANG, SANG HOON;SHIM, KYUNG BO;LEE, SUCK JUN
分类号 C23F1/30;H05K3/06 主分类号 C23F1/30
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