发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND APPARATUS FOR PROCESSING A SUBSTRATE |
摘要 |
<p>The present invention relates to a semiconductor device and a method of manufacturing the same. A semiconductor device includes a substrate which includes an active region defined by a device isolation pattern, a lower part which is arranged on the substrate and has an upper part and a lower part which has a width wider than that of the upper part, a floating gate which includes a stepped part which is arranged between the upper part and the lower part, a dielectric film which is arranged on the floating gate, and a control gate which is arranged on the dielectric film. The lower part of the floating gate has a height of 4 nm or more.</p> |
申请公布号 |
KR20140063215(A) |
申请公布日期 |
2014.05.27 |
申请号 |
KR20120130328 |
申请日期 |
2012.11.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYO JOONG;KIM, BYEONG HOON;KIM, IN YOUNG;SHIN, SANG BONG;OH, SONG HA |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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