发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND APPARATUS FOR PROCESSING A SUBSTRATE
摘要 <p>The present invention relates to a semiconductor device and a method of manufacturing the same. A semiconductor device includes a substrate which includes an active region defined by a device isolation pattern, a lower part which is arranged on the substrate and has an upper part and a lower part which has a width wider than that of the upper part, a floating gate which includes a stepped part which is arranged between the upper part and the lower part, a dielectric film which is arranged on the floating gate, and a control gate which is arranged on the dielectric film. The lower part of the floating gate has a height of 4 nm or more.</p>
申请公布号 KR20140063215(A) 申请公布日期 2014.05.27
申请号 KR20120130328 申请日期 2012.11.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYO JOONG;KIM, BYEONG HOON;KIM, IN YOUNG;SHIN, SANG BONG;OH, SONG HA
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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