发明名称 MASK BLANK AND METHOD FOR FABRICATING OF THE SAME AND PHOTOMASK
摘要 The present invention relates to a mask blank which uses a photomask in which a pattern is formed and is manufactured with the photomask used in order to transfer the pattern on a substance to be transferred by irradiating exposure light. The mask blank is characterized by being formed with a filter film having optical properties on a substrate, wherein a penetration ratio on the exposure light in a wavelength range of 300-400 nm among the exposure light is 80% or more, a penetration ratio on the exposure light in a wavelength range of 420 nm is 40% or less, and a penetration ratio on the exposure light in a wavelength range of 450 nm or more is 20% or less. The present invention is considered to be helpful to overcome resolution limitations in order to realize the micropattern of an exposure device under the exposure light of the exposure device since the filter film which transmits exposure light in a wavelength range of 400 nm or less and nearly blocks exposure light in a wavelength range of 450 nm or more is equipped. Additionally, the present invention is able to perform filtering on undesirable exposure light without installing an optical filter on the exposure device.
申请公布号 KR20140060631(A) 申请公布日期 2014.05.21
申请号 KR20120127147 申请日期 2012.11.12
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;PARK, YOUN SOO;SEO, SUNG MIN
分类号 G03F1/38;G03F1/50 主分类号 G03F1/38
代理机构 代理人
主权项
地址