| 摘要 |
A method of manufacturing a semiconductor device includes forming an insulating film over a semiconductor substrate, forming a capacitor including a lower electrode, a capacitor dielectric film including a ferroelectric material, and an upper electrode over the insulating film, forming a first protective insulating film over a side surface and upper surface of the capacitor by a sputtering method, and forming a second protective insulating film over the first protective insulating film by an atomic layer deposition method. |
