| 摘要 |
<p>The present application relates to a method of forming a silicon-containing thin film by using a chlorosilane composite which is expressed as Si_nCl_(2n+2) (here, n is an integer which is about 3 to about 10). Particularly, a silicon nitride thin film which has excellent quality and uniform thickness can be formed on a concavo-convex surface with a high aspect ratio by an atomic layer deposition method using ammonia gas at a low temperature of about 560°C or less.</p> |
