Method for deposition of silicon nitride layers

摘要

Disclosed are methods for forming SiN-containing films from the combination of aminosilane precursors and chlorosilane precursors. Varying the sequential reaction of the aminosilane precursors and chlorosilane precursors provide for the formation of SiN-containing films having varying stoichiometry. In addition, the SiN-containing film composition may be modified based upon the structure of the aminosilane precursor. The disclosed processes may be thermal processes or plasma processes at low temperatures.