GAS ETCHING APPARATUS, GAS ETCHING METHOD AND CARRIER

摘要

PROBLEM TO BE SOLVED: To provide a gas etching apparatus capable of uniformly processing one surface of a substrate.SOLUTION: A gas etching apparatus 1 is an apparatus for processing the surface of a substrate 41 which includes: a carrier 40 that holds plural substrates 41 in a self-holding manner by means of electrostatic attraction; a reaction gas ejection port 26 disposed at the surface side of the carrier 40 holding the plural substrates 41 for ejecting an etching gas for reactive-etching the surface of the plural substrates 41 held by the carrier 40; and a cooling section 52 disposed at the rear surface opposite to the front surface of the carrier 40 for cooling off the rear face of the carrier 40. The carrier 40 has: plural suction parts 47 that electrostatically attract the plural substrates 41; and a base 48 that has the plural suction parts 47 disposed thereon. The suction part 47 has: an electrode to which a voltage of an inverse polarity is applied; and an insulation film 46 disposed between the rear surface of the substrates 41 and the electrode being in contact with the rear surface of the substrate 41 and the electrode.