发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a laser beam deflector, capable of emitting a laser beam in a prescribed direction and changing an emission direction thereof.SOLUTION: A semiconductor laser element comprises: a layer structure 100 including a lower clad layer, an upper clad layer, an active layer interposed between the lower clad layer and the upper clad layer, a photonic crystal layer, and a plurality of drive electrodes for supplying driving current to a plurality of regions in the active layer; and a coating film 101 formed on a light emission end surface LES of the layer structure 100. A film thickness d in positions corresponding to a plurality of regions of the coating film 101 is set according to a refractive angle which is an angle formed between a laser beam refraction direction in the positions corresponding to the plurality of regions and a normal line of a light emission end surface LES so that laser beam amplitude reflectance on a coating film surface CFS becomes a desired value.
申请公布号 JP2014082265(A) 申请公布日期 2014.05.08
申请号 JP20120228092 申请日期 2012.10.15
申请人 KYOTO UNIV;HAMAMATSU PHOTONICS KK 发明人 KUROSAKA YOSHITAKA;WATANABE AKIYOSHI;HIROSE KAZUYOSHI;SUGIYAMA TAKAHIRO;NODA SUSUMU
分类号 H01S5/028;H01S5/12;H01S5/40 主分类号 H01S5/028
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